The device is a forward-biased GaAs0.6P0.4 pn-junction diode whose thin p layer is coated with a cesiated film of either Ag or Au 100–300 Å thick. In some cases the diodes are heat treated at 250 °C before cesiation. A cathodic emission efficiency of 1.4% is obtained at 10 A cm−2 for a heat-treated diode with a 100-Å-thick Au film. The emission is uniform over the coated surface and is proportional to exp(qV/kT). Preliminary data indicate long life for the device when operated in an ambient of Cs vapor.
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Stolte et al. (1971) studied this question.
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