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May 1, 1970Applied Physics Letters

AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTURE

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Authors

HKH. KresselPrinceton UniversityEKE. KohnSiemens (United States)HNH. NelsonRCA (United States)

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Kressel et al. (1970) studied this question.

synapsesocial.com/papers/6a70db8f5671bbf00bc2c924https://doi.org/10.1063/1.1653225
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  1. 1Properties of Efficient Silicon-Compensated Al<i>x</i>Ga1−<i>x</i>As Electroluminescent Diodes1969 · 36 citations
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  3. 3ELECTRON EMISSION FROM A ``COLD-CATHODE'' GaAs <i>p-n</i> JUNCTION1969 · 37 citations
  4. 4ELECTRON EMISSION FROM THE SCHOTTKY BARRIER STRUCTURE ZnS:Pt:Cs1968 · 13 citations