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April 1, 1969Journal of Applied Physics

Properties of Efficient Silicon-Compensated AlxGa1−xAs Electroluminescent Diodes

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Authors

HKH. KresselFHF. Z. HawryloNAN. Almeleh

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Kressel et al. (1969) studied this question.

synapsesocial.com/papers/6a6f2cc0a528af2d65c2dcdahttps://doi.org/10.1063/1.1657966
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  5. 5EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-<i>x</i>Al<i>x</i>As <i>p-n</i> JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY1967 · 149 citations