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Electron emission into vacuum has been observed from a forward-biased Cs- and O-treated GaAs p-n junction. The device was operated at room temperature with dc bias voltage. The effective efficiency of the device (emission current divided by internal diode current eligible for emission) was 0.05%, while the over-all efficiency of the device (emission current divided by total diode current) was 10−6. The low over-all efficiency is explained in terms of sample geometry and surface activation.
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Williams et al. (1969) studied this question.
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