The electrode dependence of bipolar resistive switching in -based metal-oxide-metal (MOM) structures was investigated. The structures showed bipolar resistive switching, and the polarities of external bias for set/reset processes were determined by the junction between film and electrode. The MOM structure consisting of noble metal electrodes did not show resistive switching, while the -inserted MOM structure exhibited reproducible resistive switching behavior. The results suggest that resistive switching behaviors are related to the formation and annihilation of oxygen vacancies within local conduction paths by electric-field-induced oxygen ion migration.
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Park et al. (2008) studied this question.
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