We have performed high-resolution energy analysis of the near-band-gap photoemission of a p-type InP/Ag Schottky diode under electrical bias. This original technique brings direct information on high-electric-field electron transport in semiconductors. From our experimental data, using simple models, we estimate characteristic phonon emission times in an energy range which spans the whole first conduction band, and we evidence an efficient Γ₆-X₆ intervalley transfer.
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Peretti et al. (1990) studied this question.
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