For the analysis of deep-level parameters in semiconductors, a new DLTS (Deep-Level Transient Spectroscopy) method has been proposed, in which a squaring device for the capacitance-signal processing is used with the conventional DLTS system. This method (C 2 -DLTS) is simple and is especially effective in the precise analysis of large signals due to deep-level impurities and defects.
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Okushi et al. (1981) studied this question.
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