A thermodynamic analysis of the VPE growth of GaAs using GaCl 3 and AsH 3 is described. It is shown that most of the GaCl 3 converts to GaCl and HCl at about 650°C and that the growth of GaAs is possible by the GaCl 3 and AsH 3 system without using a high temperature zone. The experimental features of the system can be explained well by equilibrium model.
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Koukitu et al. (1988) studied this question.
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