Removal of the high-resistivity layer at the n on n+ liquid phase epitaxial GaAs layer-substrate interface by controlled i n s i t u etch-back

A high-resistivity layer often forms at the gallium arsenide layer-substrate interface following preepitaxial growth heat treatment and subsequent layer growth. An in situ etch-back technique was developed for use on the substrate which resulted in the removal of the high-resistivity interfacial layer. This simple technique yielded reproducible etch-back versus time control and thus controllable removal of the high-resistivity layer.