In the high-resistivity layer of vapor-phase epitaxial GaAs films grown under the condition of relatively low arsenic vapor pressure, various interesting properties were found, such as (i) a large PTCR (positive temperature coefficient of resistivity), (ii) large photoconductivity, and (iii) current-controlled negative resistance. A possible explanation is presented.
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Okamoto et al. (1973) studied this question.
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