High‐purity epitaxial layers of n‐type gallium arsenide have been grown by vapor deposition, using the reaction of arsenic trichloride with gallium. The purity of the layers was significantly increased when nominal 99.9999+% arsenic trichloride was substituted for nominal 99.999+% material. When the less‐pure arsenic trichloride was used, there was a systematic variation in the electrical properties of layers grown in successive runs with the same gallium source. Resistivity and Hall coefficient measurements were made between 300° and 4.2°K. The maximum electron Hall mobilities were 9180, 164,000, and 175,000 cm 2 /v‐sec at 300°, 77°, and 50°K, respectively. No impurity band conduction was observed even at 4.2°K in pure samples.
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Maruyama et al. (1969) studied this question.