Electrical measurements on deuterium plasma-treated germanium samples containing deep level recombination centers show significant neutralization of these defects to depths of ∼80 μm. Chemical measurement of the deuterium profile after similar plasma treatment shows apparent incorporation depths of ∼0.2 μm. We discuss experiments which resolve this discrepancy, and show that hydrogen diffusion into the bulk of the germanium is responsible for the observed neutralization.
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Pearton et al. (1984) studied this question.
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