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August 1, 1981Applied Physics Letters

Measurement of the diffusion coefficient and recombination effects in germanium by diffraction from optically-induced picosecond transient gratings

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Authors

SMSteven C. MossRutherford Appleton LaboratoryJLJ. R. LindleDCS Corporation (United States)HMH. J. MackeyUniversity of North Texas

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Moss et al. (1981) studied this question.

synapsesocial.com/papers/6a71089be36a167817e2dccdhttps://doi.org/10.1063/1.92688
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Also Consider

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  1. 1Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free-carrier gratings1978 · 162 citations
  2. 2Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium1974 · 157 citations