Organic Field-Effect Transistor Using Oligoselenophene as an Active Layer

The organic field-effect transistor using the oligoselenophene as an active layer has been first successfully fabricated. 2,2‘:5‘,2‘ ‘:5‘ ‘,2‘ ‘‘-Quaterselenophene (4S) showed p-channel characteristics and the best mobility of 3.6 × 10-3 cm-2 V-1 s-1 was obtained for the film prepared at a substrate temperature of 60 °C, which is the same with that of the vapor deposited quaterthiophene film.