Accelerated publication 17.1% efficient Cu(In,Ga)Se₂‐based thin‐film solar cell

We report a world‐record, total‐area efficiency of 17.1% for a polycrystalline thin‐film Cu(In,Ga)Se 2 ‐based photovoltaic solar cell. the incorporation of Ga to raise the absorber bandgap has been accomplished successfully and in such a manner that an open‐circuit voltage of 654 mV and a fill factor of greater than 77% have been achieved. We describe briefly the deposition process, the device structure, and the device performance characteristics.