The major chemical trends in the energy levels of sp³-bonded substitutional deep impurities in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO are predicted. N impurities (deposited on the anion site by ion implantation) appear to be candidates for producing shallow p-type dopants in these materials.
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Kobayashi et al. (1983) studied this question.
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