1T–1R hybrid-type devices consisting of a silicon transistor and a resistive polymer memory as nonvolatile memory cell elements are demonstrated. Our results show that the operation of the 1T–1R device can be controlled by the resistance states of the polymer memory device. Written or erased data in the 1T–1R devices was maintained for more than 104 s.
No takes yet. Share an insight, caveat, or question.
Kim et al. (2009) studied this question.