Nanoimprinted lithography high performance in-plane organic diodes

We have used nanoimprint lithography to fabricate organic in-plane diodes whose design and process are suitable for mass produced by roll to roll production for simple radio frequency circuitry. The diode characteristics are a result of a channel constriction with rectifying ratios up to 3.25 × 104. Above the threshold voltage their behavior is quadratic, and there is a non-quadratic relationship between the threshold voltage and channel width and channel length. The phenomenon is the resultant interaction of the distribution of the localized states and the additional in-plane transverse electric field through the device channel.