One-dimensional lateral-field-effect transistor with trench gate-channel insulation

A novel unipolar transistor device has been realized starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAs/GaAs heterostructures. A 600-nm-wide 1D channel is insulated laterally from 2DES regimes by 700-nm-wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral field effect of the adjacent 2DES gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room-temperature operation is demonstrated yielding a 17 μS transconductance corresponding to 170 mS/mm 2D transconductance.<hedend>