Ruthenium dioxide films were prepared at on substrates with capacitor holes having an aspect ratio of 3.5 by metallorganic chemical vapor deposition (MOCVD) using (2,4-dimethylpentadienyl) (ethylcyclopentadienyl) ruthenium [Ru(DMPD)(EtCp)] as a Ru source. Conformal film deposition above 86% was ascertained at . Postannealing at 500 and under atmospheric flow improved the film crystallinities and resistivities without any degradation of the conformability.
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Kawano et al. (2006) studied this question.
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