Ru films were fabricated by chemical vapor deposition using Ru(C 5 H 5 ) 2 and O 2 . The deposition of Ru film was controlled by the surface reaction kinetics as the rate limiting step with activation energy of 2.48 eV below 250°C and by the mass transport process above 250°C. Ru films had a polycrystalline structure and showed low resistivity of about 12 µΩcm. Ru films deposited at 230°C showed excellent step coverage. We applied Ru films prepared by chemical vapor deposition to the bottom electrode of a Ba 0.25 Sr 0.75 TiO 3 capacitor and obtained good electrical characteristics.
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Aoyama et al. (1999) studied this question.
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