Answers are grounded in this paper and cite their sources.
Experimental and theoretical results from our work on current-access technology show promise for high-density, ∼107bits/cm2, and high-frequency, f3(FeGe)5O12, (LaLuSmCa)3(FeGe)5O12, and (LaLuSm)3(FeGa)5O12, the last appears best suited; some room temperature characteristics of the composition La0.6LU2.1Sm0.3Ga0.9Fe4.1O12are 4μMM, = 470G, μ = 750 cmS−1. Oe−1, d = 1.6 μm, and ΔHc= 2 Oe across a bubble for the threshold of motion. Necessary improvements in processing were made with a radio-frequency, chlorine-containing plasma etch which produced metal patterns identical to those of the etch mask. We anticipate that current-access devices, when compared to conventional field-access devices, will achieve higher data rates, lower power consumption per bit, and greater storage densities with existing processing technologies.
No takes yet. Share an insight, caveat, or question.
Bobeck et al. (1979) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: