Detection of a Formate Surface Intermediate in the Atomic Layer Deposition of High-κ Dielectrics Using Ozone

In situ FTIR studies of O3 interacting with TMA-derived Al2O3 surfaces reveal that O incorporation into the surface results in a stable formate intermediate. DFT calculations provide conclusive band assignments, identifying the surface species. These results have broad implications for understanding the high-κ dielectric ALD process using an O3 precursor