Designing a novel voltage‐lift technique based non‐isolated boost DC‐DC converter with high voltage gain

This article presents a novel non-isolated boost converter based on the voltage-lift (VL) technique with high voltage gain. In the current study, the operation principles, the steady-state relations in continuous conduction mode (CCM) and discontinuous conduction mode (DCM), the critical inductance calculation, a theoretical analysis of the power losses, and the state-space averaged model (SSA) analysis with effects of parasitic elements are provided. The proposed converter is compared with other recently proposed non-isolated boost converters, which validates the merits of the proposed converter, such as a higher voltage gain and efficiency as well as better electrical stresses on semiconductor devices. Finally, a 100 W laboratory prototype is developed with experiments to validate the proposed converter's given theories and feasibility.