Secondary negative ions yields of elements in the III rd , IV th , V th periodic table groups emitted under Cs + bombardment of Si surface in presence of oxygen are reported. The ion yield variation on oxygen partial pressure in the analytical chamber obtained for different ions allows taking a step forward the development of secondary ion emission model. The ion yield enhancement under particular oxygen surface coverage offers an approach for quantitative analysis of ultra‐shallow semiconductor structures and interfaces.
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A. Merkulov (2012) studied this question.
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