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The carrier induced refractive-index change Δn in integrated InGaAsP 1.30 μm interferometer structures is evaluated by 1.55 μn transmission measurements. At carrier concentrations N from 8 × 1016/cm3 to 3 × 1018/cm3 a value of Δn/N = –1 × 10-20cm3 is obtained. A good agreement of the experimental results with theoretical predictions on bandfilling, plasma effect and bandgap shrinkage is demonstrated.
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Schraud et al. (1991) studied this question.
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