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High contact resistance and symmetrical conduction are serious challenges in practical applications of transition metal dichalcogenide (TMD) field-effect transistors (FETs). Unipolar behavior and reduced contact resistance are achieved for tungsten disulfide (WS2) FETs by using a TiO2 interfacial layer inserted between a metal layer and a WS2 layer.
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Park et al. (2015) studied this question.
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