Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
December 1, 1956Physical Review

Rate Limitation at the Surface for Impurity Diffusion in Semiconductors

View Full Paper
Ask AI
Bookmark
Share

Authors

FSF. M. SmitsUtrecht UniversityRMR. C. MillerAT&T (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Smits et al. (1956) studied this question.

synapsesocial.com/papers/6a71411226a7f98052dda3abhttps://doi.org/10.1103/physrev.104.1242
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Properties of Zinc-, Copper-, and Platinum-Doped Germanium1954 · 40 citations
  2. 2Diffusion through an Interface—Ternary Systems1952 · 43 citations
  3. 3Chemical Interactions Among Defects in Germanium and Silicon1956 · 488 citations
  4. 4Migration in crystal lattices1941 · 36 citations
  5. 5Diffusion through an Interface—Binary System1952 · 33 citations