AlInGaN Metal-Insulator-Semiconductor Photodetectors at UV-C 280 nm

Aluminum indium gallium nitride (AlInGaN) UV-C 190– metal-insulator-semiconductor photodetectors (PDs) have been fabricated by using a insulating layer. Unlike the heterostructure PDs operated at , the use of an structure should cause less stress and reduce the degree of lattice mismatch by 1.6%. The dark current of PDs with an insulating layer was much smaller than that of PDs without an insulating layer, which can be attributed to the increasing surface barrier height and the decreasing density of the interface states between the metal and the semiconductor.