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August 1, 1997Japanese Journal of Applied PhysicsOpen Access

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

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Authors

Shuji Nakamura
Shuji NakamuraNEC (Japan)MSMasayuki SenohNichia Corporation (Japan)SNShin‐ichi NagahamaKyoto University

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Nakamura et al. (1997) studied this question.

synapsesocial.com/papers/6a893ec7cd098b93acdef29dhttps://doi.org/10.1143/jjap.36.l1059
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