The luminescence data of Schmid, Thewalt, and Dumke on heavily doped p-type Si has been analyzed to provide the effective band gap for the n⋅p product at room temperature in p+Si. The results are in very good agreement with the measurements of Slotboom and DeGraaff, and extend the acceptor concentrations for which the effective band gap is available by a factor of four. The disagreement of these results with the values obtained from infrared absorption measurements is further evidence of a nonrigid band-gap shift.
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W. P. Dumke (1983) studied this question.
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