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November 1, 1978Advances In PhysicsOpen Access

Heavily doped semiconductors and devices

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Authors

RAR. A. AbramPhysikalisch-Technische BundesanstaltGRG.J. ReesUniversity of SheffieldBWB.L.H. WilsonMotorola (United States)

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Abram et al. (1978) studied this question.

synapsesocial.com/papers/6a03f01d4a5db22ff2893f5ahttps://doi.org/10.1080/00018737800101484
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