Current overshoot due to parasitic capacitance during set transition represents a major concern for controlling the resistance and current consumption in resistive switching memory (RRAM) arrays. In this letter, the impact of current overshoot on the low-resistance state (LRS) is evaluated by means of experiments on one-transistor/one-resistor structures of HfO2RRAM. We develop a physics-based analytical model, able to calculate the LRS resistance and the corresponding reset current by a closed-form formula. The model allows predicting the current overshoot impact for any value of compliance current, set voltage, and parasitic capacitance.
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Ambrogio et al. (2016) studied this question.
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