Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 27, 2012IEEE Transactions on Electron Devices

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

View Full Paper
Ask AI
Bookmark
Share

Authors

SLStefano LarentisConsorzio Nazionale Interuniversitario per la NanoelettronicaFNF. NardiApplied Materials (United States)SBSimone BalattiApplied Materials (United States)

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Larentis et al. (2012) studied this question.

synapsesocial.com/papers/6a158875d64fa333899fc76dhttps://doi.org/10.1109/ted.2012.2202320
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Model of metallic filament formation and rupture in NiO for unipolar switching2010 · 108 citations
  2. 2Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films2009 · 186 citations
  3. 3Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories2011 · 227 citations