Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO3 thin film

Multiferroic Bismuth Ferrite (BiFeO3) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO3 thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO3 and Fe2O3 to pure BiFeO3 phase and, subsequently, to a mixture of BiFeO3 and Bi2O3 with increase in the concentration of excess Bi from 0% to 15%. BiFeO3 thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe2O3). Deterioration in ferroic properties of BiFeO3 thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO3 thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm2 and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO3 thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO3 thin films exhibiting the improved multiferroic properties.