Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser

We have demonstrated laser action of an InGaN self-assembled quantum dot (QD) laser by optical pumping. We have grown the laser structure with the In0.2Ga0.8N QDs embedded in the active layer, using atmospheric-pressure metalorganic chemical vapor deposition. A clear threshold was observed in the relation between the excitation and emission intensity at room temperature. Above the threshold, the width of the emission peak was below 0.1 nm (resolution limit), and the emission was strongly polarized in the transverse electric mode. These results indicate that lasing oscillation in the InGaN self-assembled QD laser has been achieved at room temperature.