Multi-stacked quantum dot resonant-cavity photodetectoroperating at 1.06 µm

This is the authors' abstract. We don't add key points for this paper.

A resonant-cavity pin photodiode with two quantum dot absorbing regions is described. Each absorbing region consists of a stack of five self-assembled, quantum-dot layers, that are formed by the deposition of six monolayers of In0.5Ga0.5As, with GaAs spacer layers. To optimise the responsivity, the quantum dot stacks are placed at the antinodes of the cavity. The peak efficiency is 65% at 1.06 µm with a spectral bandwidth of 1.3 nm.