What question did this study set out to answer?

To measure lattice displacement, amorphous layer formation, and dopant atom lattice locations in silicon and germanium following room-temperature heavy ion implantation and subsequent thermal annealing.

March 15, 1968Canadian Journal of Physics

Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

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Authors

JMJ. W. MayerON Semiconductor (United States)LEL. ErikssonCenter for NanoScience SPS. T. PicrauxLos Alamos National Laboratory

Discussion

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Implication

Experimental study demonstrates lattice disorder and recrystallization dynamics in ion-implanted silicon and germanium, indicating distinct thermal annealing thresholds for crystal recovery.

Key Points

To measure lattice displacement, amorphous layer formation, and dopant atom lattice locations in silicon and germanium following room-temperature heavy ion implantation and subsequent thermal annealing.
Implanted silicon and germanium at room temperature with 40-keV heavy ions (Ga, As, Sb, In, P) across doses ranging from ~10^13 to >10^15 ions/cm^2.
Used orientation-dependent backscattering yields of 1.0-MeV helium ions to quantify displaced host atoms and determine substitutional positioning of implanted dopants.
Subjected implanted crystals to thermal annealing at temperatures between 180 °C and 900 °C to evaluate structural reordering.
Each heavy ion displaced thousands of lattice atoms; isolated disorder (~10^13 ions/cm^2) reordered at 260 °C in Si and 180 °C in Ge, while fully amorphous layers (>10^14 ions/cm^2) required 570 °C in Si and 380 °C in Ge to reorder from the crystal interface.
Following annealing, ~75% of As and ~90% of Sb occupied substitutional sites in silicon, and ~80% of In became substitutional in germanium.
Higher annealing temperatures (700–900 °C in silicon) reduced substitutional atom fractions due to internal precipitation or surface diffusion.

Cite This Study

Mayer et al. (1968) studied this question.

synapsesocial.com/papers/6a717e2726a7f98052ddd26d https://doi.org/10.1139/p68-082

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March 15, 1968Canadian Journal of Physics

Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

View Full Paper

Ask AI

Bookmark

Authors

JMJ. W. MayerON Semiconductor (United States)LEL. ErikssonCenter for NanoScience SPS. T. PicrauxLos Alamos National Laboratory

Discussion

Member takes

Implication

Experimental study demonstrates lattice disorder and recrystallization dynamics in ion-implanted silicon and germanium, indicating distinct thermal annealing thresholds for crystal recovery.

Key Points

To measure lattice displacement, amorphous layer formation, and dopant atom lattice locations in silicon and germanium following room-temperature heavy ion implantation and subsequent thermal annealing.
Implanted silicon and germanium at room temperature with 40-keV heavy ions (Ga, As, Sb, In, P) across doses ranging from ~10^13 to >10^15 ions/cm^2.
Used orientation-dependent backscattering yields of 1.0-MeV helium ions to quantify displaced host atoms and determine substitutional positioning of implanted dopants.
Subjected implanted crystals to thermal annealing at temperatures between 180 °C and 900 °C to evaluate structural reordering.
Each heavy ion displaced thousands of lattice atoms; isolated disorder (~10^13 ions/cm^2) reordered at 260 °C in Si and 180 °C in Ge, while fully amorphous layers (>10^14 ions/cm^2) required 570 °C in Si and 380 °C in Ge to reorder from the crystal interface.
Following annealing, ~75% of As and ~90% of Sb occupied substitutional sites in silicon, and ~80% of In became substitutional in germanium.
Higher annealing temperatures (700–900 °C in silicon) reduced substitutional atom fractions due to internal precipitation or surface diffusion.

Cite This Study

Mayer et al. (1968) studied this question.

synapsesocial.com/papers/6a717e2726a7f98052ddd26d https://doi.org/10.1139/p68-082

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