Quantum size effect in the transport of electrons in semiconductor quantum well structures

In this paper we present the results of calculations for the low temperature mobility of electrons confined in isolated quantum well structures, when the scattering is dominated by ionized impurities. The effect of the variation in quantum well thickness on the electron mobility is studied, with particular emphasis on the quantum size effect regime. Explicit results are presented for AlxGa1−xAs/GaAs(100) quantum wells for x=0.3, both for uniform and modulation doping schemes. The present results for the quantum size effect regime differ significantly from those reported recently for a nondegenerate confined electron gas at a single heterojunction interface. The reasons for these differences are discussed.