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June 1, 1993IEEE Transactions on Electron Devices

Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's

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Authors

JAJames A. AdamsTargazyme (United States)ITIain ThayneWates (United Kingdom)CWC.D.W. WilkinsonBoeing (United States)

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Adams et al. (1993) studied this question.

synapsesocial.com/papers/6a7186f8febe604dd70a2663https://doi.org/10.1109/16.214727
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Also Consider

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  1. 1Space-Charge Limited Emission in Semiconductors1953 · 180 citations
  2. 2Drain conductance of junction gate FET's in the hot electron range1976 · 49 citations
  3. 3GaAs MESFET model for circuit simulation1989 · 2 citations
  4. 4MOSFET scaling limits determined by subthreshold conduction1989 · 34 citations
  5. 5Two-dimensional analysis of substrate effects in junction f.e.t.s1970 · 26 citations