Answers are grounded in this paper and cite their sources.
This paper describes a generalized circuit model for GaAs MESFETs. The novel features of the model include continuous descriptions for the intrinsic FET, Schottky diode and inter-electrode capacitance, valid both above and below device threshold. The model also displays good agreement with HEMT characteristics.
No takes yet. Share an insight, caveat, or question.
George et al. (1989) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: