n + p p +GaAs and n+pP+ GaAs/GaAs/Al0.3Ga0.7As mesa diodes have been fabricated from films grown by molecular-beam epitaxy. The diodes made from films employing an AlGaAs buffer layer show marked improvements (a factor of 5 reduction) in recombination current densities. Deep level transient spectroscopy measurements moreover indicate that deep level concentrations are reduced by the AlGaAs buffer.
No takes yet. Share an insight, caveat, or question.
Rancour et al. (1987) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: