Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1989IEEE Transactions on Electron Devices

Analytic theory for current-voltage characteristics and field distribution of GaAs MESFET's

View Full Paper
Ask AI
Bookmark
Share

Authors

CCC. S. ChangNational Yang Ming Chiao Tung UniversityDDD.-Y.S. Day

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Chang et al. (1989) studied this question.

synapsesocial.com/papers/6a718773e5469ee92be20446https://doi.org/10.1109/16.19926
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Power-limiting breakdown effects in GaAs MESFET's1981 · 126 citations
  2. 2An analytic model for HEMT's using new velocity-field dependence1987 · 82 citations
  3. 3GaAs MESFET's by molecular beam epitaxy1982 · 13 citations
  4. 4Two-dimensional numerical analysis of stability criteria of GaAs FET's1976 · 103 citations