Anisotropic bending during epitaxial growth of mixed crystals on GaAs substrate

Crystals of GaxIn1−xAs and GaAsxP1−x were deposited on GaAs substrate from the vapor phase, and the deformation properties of these systems accompanying the heteroepitaxial growth were investigated. When the crystal surface of the substrate was {100}, it was found that there was an evident anisotropy of bending in the directions of 〈110〉 and 〈110〉, and this phenomenon cannot be explained by the simple bimetal model. The influence of the crystalline surface of the substrate on the deformation was also checked.