The electrorellectance of GaAs, InAs, and the Ga x In 1−x As alloys has been measured between 2 and 6 eV at room temperature. The E 1 , E 0 ′, and E 2 transitions and their associated split-off and oscillatory components have been observed, and their behavior as a function of alloy composition is presented. A more detailed account of the band structure of the compounds and their alloys than was obtained by earlier reflectance results is given.
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Thompson et al. (1967) studied this question.
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