Influence of hot carriers on the temperature dependence of threshold in 1.3-μm InGaAsP lasers

This is the authors' abstract. We don't add key points for this paper.

Carrier heating effects are shown to contribute significantly to temperature sensitivity of threshold current in InGaAsP 1.3-μm lasers. For the empirical expression Jth∼J0 exp(T/T0), a single value of T0=90 K describes the data for 100 K<TL<350 K when T is taken to be the carrier temperature. This result is in contrast to the variation in T0 from 90 to 60 K found when T is taken to be the lattice temperature.