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Zn-doping in In 0.53 Ga 0.47 As was investigated. The dependence of the resistivity and Hall mobility of Zn-doped In 0.53 Ga 0.47 As upon the hole concentration is found to be the same as that of Zn-doped In 0.15 Ga 0.85 As. Photoluminescence in Zn-doped In 0.53 Ga 0.47 As is investigated in relation to hole concentration. In 0.53 Ga 0.47 As homojunction diodes are made, and minoritycarrier diffusion lengths of holes and electrons are derived from the EBIC (electron beaminduced current) intensity which is dependent upon the distance from the junction interface.
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Takeda et al. (1980) studied this question.
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