We report results of Al0.45Ga0.55As/GaAs HEMTs grown by atmospheric-pressure MOVPE. The 1 μm-gate-length devices exhibited extrinsic room-temperature transconductances as high as 295mS/mm, which we believe to be the best DC performance to date for devices utilising such a high Al mole fraction.
No takes yet. Share an insight, caveat, or question.
Powell et al. (1987) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: