We report on the elaboration and physical properties of fully epitaxial Fe3O4∕Al2O3 bilayers to be included in magnetic tunnel junctions. Uncovered Fe3O4(111) single layers and bilayers were epitaxially grown onto sapphire (0001) substrates. Appropriate growth conditions lead to a stoichiometric Fe3O4 layer both at the Fe3O4∕Al2O3 interface and on the whole thickness, as checked by in situ x-ray photoelectron spectroscopy and by the observation of the Verwey transition, respectively. Transmission electron microscopy demonstrates the epitaxial growth of a γ-Al2O3 layer on top of Fe3O4(111), which insulating properties have been monitored by conductive tip atomic force microscopy.
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Bataille et al. (2004) studied this question.
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