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We establish chemical-shift low-energy photoelectron diffraction as a novel and powerful method for the determination of clean surface structures. Combined with a new theoretical approach based on full multiple scattering theory with complex potential, the method is applied to the case of the InP(110) clean surface relaxation. The extreme sensitivity of this technique to structural parameters allows us to measure with good accuracy both the first layer and the second layer relaxation angle (respectively 23^∘{} and -5^∘{}).
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Gota et al. (1993) studied this question.
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